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16100 1N60P 20100CT 4000V Q5RW59C AOZ1018 2F5081 AM29853A
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1425
DESCRIPTION *With TO-3P(H)1S package *Built-in damper diode *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *Designed for use in color TV deflection circuits PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 2.5 1.0 80 150 -55~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1425
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA; IC=0
5
V
VCE(sat) VBE(sat)
Collector-emitter saturation voltage
IC=2A; IB=0.6A IC=2A; IB=0.6A
8.0
V
Base-emitter saturation voltage
1.5
V A
ICBO
Collector cut-off current
VCB=500V; IE=0
10
hFE
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition freuqency
IC=0.1A ; VCE=10V;f=1MHz
3
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
95
pF
VF tf
Diode forward voltage
IF=2.5A IC=2A;IB1=0.6A
2.0
V s
Fall time
1.0
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1425
Fig.2 outline dimensions (unindicated tolerance:0.15 mm)
3


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